Browsing by Subject "Semiconducting indium"

Now showing items 1-3 of 3

    • Article  

      Current transport in semiconductor nanowires with built-in barriers based on a 1D transfer matrix calculation 

      Zervos, Matthew; Pelekanos, N. T. (2008)
      A one dimensional (1D) transfer matrix calculation of current transport in semiconductor nanowires with built-in barriers is described within the effective mass approximation by taking into account (i) the quantum confinement ...
    • Article  

      InAs quantum dots grown by molecular beam epitaxy on GaAs (211)B polar substrates 

      Zervos, Matthew; Xenogianni, C.; Deligeorgis, G.; Androulidaki, M.; Savvidis, P. G.; Hatzopoulos, Z.; Pelekanos, N. T. (2006)
      InAs nanostructures were grown by molecular beam epitaxy on GaAs (211)B at temperatures between 400-530 °C and growth rates that were varied between 0.1 to 0.02 mono-layers (ML) per second. For temperatures up to 500 °C ...
    • Article  

      Spin current depolarization under high electric fields in undoped InGaAs 

      Okamoto, N.; Kurebayashi, H.; Harii, K.; Kajiwara, Y.; Beere, H.; Farrer, I.; Trypiniotis, Theodossis; Ando, K.; Ritchie, D. A.; Barnes, C. H. W.; Saitoh, E. (2011)
      Carrier spin polarization in In0.13Ga0.87 As under high electric fields has been investigated. The spin polarization was created by optical spin orientation techniques and the inverse spin-Hall effect was employed to measure ...